View JANTX2N6287_4544746.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

mil -prf-19500/505b 4 august 1999 superseding mil-s-19500/505a(usaf) 6 october 1993 performance specification sheet semiconductor device, darlington transistor, pnp, silicon, power type 2n6286, 2n6287 jan, jantx, and jantxv this specification is approved for use by the depart - ments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for pnp, darlington, power transistors. three levels of product assurance are provided for each encapsulated device type as specified in mil-prf-19500. 1.2 physical dimensions . see figure 1 (similar to t0-3). 1.3 maximum ratings . p t 1 / type t c = +25 c t c = +100 c v cbo v ceo v ebo i c i b t op and t stg 2n6286 2n6287 w 175 175 w 87.5 87.5 v dc -80 -100 v dc -80 -100 v dc -7 -7 a dc -20 -20 a dc -0.5 -0.5 c -65 to +175 -65 to +175 1 / derate linearly at 1.17 w/ c above t c > +25 c. 1.4 primary electrical characteristics . switching h fe2 1 / v ce = -3 v dc i c = -10 a dc h fe3 1 / v ce = -3 v dc i c = -20 a dc v ce(sat)1 i c = -20 a dc i b = -200 ma dc v ce(sat)2 i c = -10 a dc i b = -40 ma dc v b e(sat) i c = -20 a dc i b = -200 ma dc t on t off min max 1,250 18,000 300 v dc -3.0 v dc -2.0 v dc -4.0 m s 2 m s 10 c obo v cb = -10 v dc i e = 0 100 khz f 1 mhz r q jc h fe v ce = -3 v dc i c = -10 a dc f = 1 mhz ? h fe ? v ce = -3 v dc i c = -10 a dc f = 1 mhz min max pf 400 c/w 0.857 700 8 80 1 / pulsed (see 4.5.1). amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 4 november 1999 inch-pound beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: commander, defense supply center columbus, attn: dscc-vac, 3990 east broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/505b 2 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devices, general specification for. standard military mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the defense automated printing service, building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 qualification . devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.2 associated specification . the individual item requirements shall be in accordance with mil-prf-19500 and as specified herein. 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf- 19500. 3.4 interface requirements and physical dimensions . the interface requirements and physical dimensions shall be as specified in mil-prf-19500 and on figure 1 (similar to t0-3) herein. 3.4.1 lead finish . unless otherwise specified, lead finish shall be solderable in accordance with mil-std-750, mil-prf-19500, and herein. 3.5 marking . devices shall be marked in accordance with mil-prf-19500. 3.6 electrical performance characteristics . unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.7 electrical test requirements . the electrical test requirements shall be the subgroups specified in table i. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4).
mil-prf-19500/505b 3 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. body contour is optional within zone defined by cd 4. these dimensions shall be measured at poi nts .050 (1.27 mm) to 0.055 (1.40 mm) below seating plane. 5. both terminals. 6. at both ends. 7. two holes. 8. terminal 1 is the emitter, terminal 2 is base. the collector shall be electrically connected to the case. 9. ld applies between l1 and ll. diameter is uncontrolled in l1. 10. in accordance with ansi y14.5m, diameters are equivalent to f x symbology. figure 1. physical dimensions . (similar to to-3)
mil-prf-19500/505b 4 dimensions symbol inches millimeters notes min max cd 0.875 22.23 3 ch 0.250 0.360 6.35 9.14 hr 0.495 0.525 12.57 13.34 hr 1 0.131 0.188 3.33 4.78 ht 0.060 0.135 1.52 3.43 ld 0.038 0.043 0.97 1.09 5, 9 ll 0.312 0.500 7.92 12.7 5 l 1 0.050 1.27 5, 9 mhd 0.151 0.165 3.84 4.19 7 mhs 1.177 1.197 29.90 30.40 ps 0.420 0.440 10.67 11.18 4 ps 1 0.205 0.225 5.21 5.72 s 1 0.655 0.675 16.64 17.15 figure 1. physical dimensions (similar to to-3) - continued.
mil-prf-19500/505b 5 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500 and herein. 4.3 screening . screening shall be in accordance with table iv of mil-prf-19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. measurements screen (see table iv of mil-prf-19500) jantx and jantxv levels 11 i cex1 and h fe1 12 see 4.3.1 13 subgroup 2 of table i herein; i cex1 = 100 percent of initial value or 100 m a dc, whichever is greater. d h fe1 = 40 percent of initial value. 4.3.1 power burn -in conditions . power burn -in conditions are as follows: t j = +162.5 c 12.5 c, v ce 3 -10 v dc. note: no heat sink or forced air cooling on the devices shall be permitted. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. electrical measurements (end-points) shall be in accordance with table i, subgroup 2 herein. 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vib (jan, jantx and jantxv) of mil-prf-19500. electrical measurements (end-points) shall be in accordance with table i, subgroup 2 herein. subg roup method condition b3 1037 for solder die attach: v cb 3 -10 v dc; t a 35 c, 2,000 cycles. b3 1037 for eutectic die attach: t a 35 c adjust p t to achieve t j = 150 c minimum, v cb 3 -10 v dc. 4.4.3 group c inspection . group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil-prf-19500. electrical measurements (end-points) shall be in accordance with table i, subgroup 2 herein. subgroup method condition c2 2036 tension: test condition a; weight = 10 lbs; time = 15 s. c6 1037 for solder die attach: v cb 3 -10 v dc; t a 35 c, 6,000 cycles. c6 1037 for eutectic die attach: t a 35 c adjust p t to achieve t j = 150 c minimum, v cb 3 -10 v dc. 4.5 method of inspection . methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil -std -750.
mil-prf-19500/505b 6 table i. group a inspection . mil-std-750 limits inspection 1 / method conditions symbol min max unit subgroup 1 visual and mechanical examination 2071 subgroup 2 breakdown voltage, collector - emitter 2n6286 2n6287 3011 bias condition d; i c = -100 ma dc; pulsed (see 4.5.1) v (br)ceo -80 -100 v dc v dc collector - emitter cutoff current 2n6286 2n6287 3041 bias condition a; v be = +1.5 v dc v ce = -80 v dc v ce = -100 v dc i cex1 -0.5 ma dc collector - emitter cutoff current 2n6286 2n6287 3041 bias condition d v ce = -40 v dc v ce = -50 v dc i ceo -1.0 ma dc emitter - base cutoff current 3061 bias condition d; v eb = -7 v dc i ebo -2.5 ma dc base ? emitter ( nonsaturated) 3066 test condition b; v ce = -3 v dc; i c = -10 a dc v be -2.8 v dc base - emitter voltage (saturated) 3066 test condition a; i c = -20 a dc; i b = -200 ma dc; pulsed (see 4.5.1) v be(sat) -4.0 v dc collector - emitter saturated voltage 3071 i c = -20 a dc; i b = -200 ma dc; pulsed (see 4.5.1) v ce ( sat)1 -3.0 v dc collector - emitter saturated voltage 3071 i c = -10 a dc; i b = -40 ma dc; pulsed (see 4.5.1) v ce(sat)2 -2.0 v dc forward-current transfer ratio 3076 v ce = -3 v dc; i c = -1 a dc; pulsed (see 4.5.1) h fe1 1,500 forward-current transfer ratio 3076 v ce = -3 v dc; i c = -10 a dc; pulsed (see 4.5.1) h fe2 1,250 18,000 see footnote at end of table.
mil-prf-19500/505b 7 table i. group a inspection - continued. mil-std-750 limits inspection 1 / method conditions symbol min max unit subgroup 2 - continued forward-current transfer ratio 3076 v ce = -3 v dc; i c = -20 a dc; pulsed (see 4.5.1) h fe3 300 subgroup 3 high-temperature operation: collector - emitter cutoff current 2n6286 2n6287 3041 t a = +150 c bias condition a; v be = +1.5 v dc; v ce = -80 v dc v ce = -100 v dc i cex2 -5.0 ma dc collector - emitter saturated voltage 3071 i c = -10 a dc; i b = -40 ma dc; pulsed (see 4.5.1) v ce(sat)3 -2.0 v dc low-temperature operation: forward-current transfer ratio 3076 t a = -55 c v ce = -3 v dc; i c = -10 a dc; pulsed (see 4.5.1) h fe4 150 subgroup 4 pulse response: turn-on time v cc = -30 v dc; i c = -10 a dc; i b = -40 ma dc; (see figure 2) t on 2.0 m s turn-off time v cc = -30 v dc; i c = -10 a dc; i b1 = i b2 = -40 ma dc (see figure 2) t off 10 m s magnitude of common- emitter small-signal short-circuit forward- current transfer ratio 3306 v ce = -3 v dc; i c = -10 a dc; f = 1.0 mhz ? h fe ? 8 80 small-signal short-circuit forward-current transfer ratio 3206 v ce = -3 v dc; i c = -10 a dc h fe 300 open circuit output capacitance 3236 v cb = -10 v dc; i e = 0; 100 khz f 1 mhz c obo 400 pf see footnote at end of table.
mil-prf-19500/505b 8 table i. group a inspection - continued. mil-std-750 limits inspection 1 / method conditions symbol min max unit subgroup 5 safe operating area continuous (dc) 3051 t c = +25 c; t = 1 s; 1 cycle; (see figure 3) test 1 test 2 v ce = -8.75 v dc; i c = -20 a dc v ce = -30 v dc; i c = -5.8 a dc test 3 2n6286 2n6287 v ce = -80 v dc; i c = -100 ma dc v ce = -100 v dc; i c = -100 ma dc electrical measurements see table i, subgroup 2 safe operating area (switching) 3053 load condition c; (unclamped inductive load); (see figure 4) t a = +25 c; r s 0.1 w ; t r + t f 15 ns; duty cycle 2 percent test 1 t p = 80 m s; (vary to obtain i c ); r bb1 3 50 w ; v bb1 3 -10 v dc; r bb2 = ; v bb2 = 0; i c = -20 a dc; v cc 3 -50 v dc; the coil used shall provide a minimum inductance of 1 mh at 20 a. (for reference only; two coils in parallel (super electric corporation type s16884 or equivalent).) test 2 t p = 1 ms; (vary to obtain i c ); r bb1 3 50 w ; v bb1 3 -10 v dc; r bb2 = ; v bb2 = 0; i c = -500 ma dc; v cc 3 -50 v dc; the coil used shall provide a minimum inductance of 100 mh at 500 ma. (for reference only; two coils in series, 80 mh and 20 mh windings (triad c-48u or equivalent).) see footnote at end of table.
mil-prf-19500/505b 9 table i. group a inspection - continued. mil-std-750 limits inspection 1 / method conditions symbol min max unit subgroup 5 - continued electrical measurements see table i, subgroup 2 safe operating area (switching) 3053 load condition b; (clamped inductive load); t a = +25 c; r s = 0.1 w ; t r + t f 1.0 m s; duty cycle 2 percent; t p = 1 ms (vary to obtain i c ); r bb1 = 50 w ; v bb1 = -10 v dc; r bb2 = 100 w ; v bb2 = +1.5 v dc; v cc = -25 v dc; i c = -20 a dc; r l 2 w ; l = 5 mh; (four coils in parallel, 20 mh windings (triad c- 48u or equivalent)). 2n6286 2n6287 clamp voltage = 80 +0, -5 v dc clamp voltage = 100 +0, -5 v dc device fails if clamp voltage is not reached electrical measurements see table i, subgroup 2 subgroups 6 and 7 not applicable 1 / for sampling plan, see mil-prf-19500.
mil-prf-19500/505b 10 notes: 1. the input waveform is supplied by a pulse generator with the fo llowing characteristics: t r 20 ns, t f 20 ns, z out = 50 w , pw = 23 m s, duty cycle 2 percent. 2. the output waveform is monitored on a sampling oscilloscope with z in 3 20 m w , c in 11.5 pf, t r 2 ns. 3. resistors shall be noninductive types. 4. the dc power supplies may require additional by-passing in order to minimize ringing. figure 2. pulse response test circuit .
mil-prf-19500/505b 11 figure 3. maximum safe operating area (continuous dc) .
mil-prf-19500/505b 12 figure 4. safe operating area for switching between saturation and cutoff (unclamped inductive load) .
mil-prf-19500/505b 13 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. issue of dodiss to be cited in the solicitation (see 2.2.1). b. the lead finish as specified (see 3.4. 1). c. type designation and quality assurance level. d. packaging requirements (see 5.1). 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified manufacturer's list qml-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center columbus, dscc-vqe, columbus, oh 43216. 6.4 changes from previous issue . marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. custodian: preparing activity: air force - 11 dla - cc dla ? cc review activities: (project 5961-2067) air force - 19, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/505b 2. document date (yymmdd) 990804 3. document title semiconductor device, darlington transistor, pnp, silicon, power types 2n6286, 2n6287 jan, jantx and jantxv 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted (yymmdd) 8. preparing activity a. point of contact: alan barone, b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil c. address : defense supply center columbus, attn: dscc -vac, 3990 east broad street, columbus, oh 43216 -5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533, fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-68880 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

▲Up To Search▲

Price & Availability of JANTX2N6287

	To Download JANTX2N6287 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .